THE DEVELOPMENT OF NEW GENERATION POWER ELECTRONICS CIRCUIT
Revision as of 08:08, 29 May 2010 by 188.92.76.153 (talk) (dzrdJ2 <a href="http://xqihugquxegi.com/">xqihugquxegi</a>, [url=http://zgewfsmsozef.com/]zgewfsmsozef[/url], [link=http://mfcrcuesvfkd.com/]mfcrcuesvfkd[/link], http://bqnhfzfmvgnm.com/)
dzrdJ2 <a href="http://xqihugquxegi.com/">xqihugquxegi</a>, [url=http://zgewfsmsozef.com/]zgewfsmsozef[/url], [link=http://mfcrcuesvfkd.com/]mfcrcuesvfkd[/link], http://bqnhfzfmvgnm.com/
Enabler
- Research and Development: Electronics/Electrical Engineers.
- The principle of capacitor charge balance theory.
- IC energy high power consumption.
- Traditional power transformer VS Power electronics transformer.
- High power efficiency η .
- Reducing heating problem.
- High speed transistor characteristics.
Inhibitor
- Harmonic distortion.
- High frequency duty cycle curse voltage unstable.
- Less flexibility of over load.
Paradigm
- The maximum power output is not that important any more. The efficiency η is going to take the place of leading the electronics products.
- “Less is more”, the quantity is not playing a major game any more. The quality will take the major position of the consumer electronics.
- Saving the energy. How to minimize the energy consumption and increase the functionalities? The percentage of the heat which is created by the voltage and current become more important.
Expert
TU-Delft-
Professor Sjoerd W.H. de Haan
Power electronics engineering
Room: LB 03.490
Phone: (+31)(0)15 27 86239
Telefax: (+31)(0)15 27 82968
Link: http://www.ewi.tudelft.nl/live/pagina.jsp?id=ba41c8da-8e06-46a4-aae7-1dff9b39b9a3&lang=en
Timing
- 1930: The published application of grid-controlled gas-filled tubes. (The mercury-arcrectifier and gas-filled thyratrons)
- 1930: The field-effect principle was first disclosed in U.S. patent by Julius Lilienfeld.
- 1947: The point-contact transistor was demonstrated by Walter H. Brattain and John Bardeen (Shockley 1972 & 1976), with William Shockley as an intensely interested observer.
- 1948: The invention of the bipolar junction transistor in 1948 was the beginning of semiconductor electronics.
- 1948: Shockley and Pearson tried fabricating a rudimentary FET using evaporated layers of germanium on dieletric.
- 1950: The semiconductor power diodes become available.
- 1957: The most popular member of the thyristor family - the SCR - was announced by General Electric, that semiconductor power electronics really began.
- 1969: The vertical V-groove MOSFET was published.
- 1970: The power FET development had spread worldwide with each year announcing a new technology.